Transistor FQP12N60C

Model – FQP12N60C;
Type: N-channel MOSFET

Maximum drain-source voltage (VDSS): 600 V;

Maximum gate-source voltage (VGS): ± 30 V;

Drain-source resistance (RDS(on)): 0.65 Ω (Ohms);

Maximum drain current (ID): 12 A;

Maximum operating temperature (TJ): 150 ºC;

Power (PD): 225 W;

Turn-on delay (td(ON)): 30 ns;

Turn-off delay (td(Off)): 140 ns;

Package – TO-220;

Mounting – THT.